RF Device Modeling (RF413)

SynopsisOne of the major challenges in RF semiconductor wafer technologies is the unsatisfactory accuracy of their RF device models. The models are often lagging behind the introduction of new semiconductor processes. The design and development team who uses the process has to depend on post-fabrication measured results to find out where the wafer foundry’s models fall short. Often the team also needs to fabricate some test structures in order to check and fine-tune the models, or even create their own models. This course is for the team who uses these semiconductor processes, and also for the wafer foundry’s team.

Course highlight
Worked examples showing how to extract equivalent circuit models of passive and active RF devices from measured S-parameters.

What You Will Learn

• S-parameters and why are they used at RF frequencies
• Relationship between S-parameters and impedances/voltage gain of a network
• Use of the Smith chart in impedance parameter extraction
• Construction of signal flow graphs of networks in cascade
• Use of Mason signal flow rules to derive closed loop transfer function using the signal flow graph
• Vector network analyzer 12 error terms model for 2 port S-parameters measurements
• Calibration standards including on-wafer standards and 12 error terms extraction methods
• Equivalent circuit model of inductors, capacitors and resistors, and the extraction of equivalent circuit model parameters from S-parameter measurements
• Equivalent circuit models of RF diodes, and their parameters extraction
• Equivalent circuit models of RF transistors, and their parameters extraction

Who Should AttendTechnicians and engineers who are involved in the design, test and development of RF integrated circuits, or the development, measurement and extraction of device models for RF semiconductor technologies.

PrerequisiteKnowledge of RF fundamental concepts such as transmission lines, reflections, line impedance, Smith chart, impedance-matching, and familiarity with some RF instruments such as the RF vector network analyzer and RF wafer probing, and related calibration concepts.

Course MethodologyThe course comprises lectures and worked examples. Through the worked examples, participants will see how the theory works in practice. Some of the examples will bring the attendees through the process of extracting device model parameters from measured data.

Course Duration2 days, 9am - 5pm

Course Structure1) S-Parameters and Their Applications in RF Network Characterization

• What are S-parameters and why are they used at RF frequencies
• Relationship between S-parameters and impedances/voltage gain of a network
• Use of the Smith chart in impedance parameter extraction
• Worked examples

2) Signal Flow Graphs and Applications in Network Analyzer Calibration

• How to construct signal flow graphs of networks in cascade
• Use of Mason signal flow rules to derive closed loop transfer function using the signal flow graph
• Worked examples including the vector network analyzer 12 error terms model for 2 port S-parameters measurements
• Calibration standards including on-wafer standards and 12 error terms extraction methods

3) RF Passive Components Equivalent Circuit Models and Parameter Extraction at RF Frequencies

• Equivalent circuit model of inductors, capacitors and resistors
• Worked examples on extraction of equivalent circuit model parameters from S-parameter measurements

4) RF Diodes Equivalent Circuit Models and Parameter Extraction

• Equivalent circuit models of RF diodes
• Worked examples on parameter extraction

5) RF Transistor Equivalent Circuit Models and Parameters Extraction

• Equivalent circuit models of RF transistors
• Worked examples on parameters extraction